Referenced Items are not available for this document.
We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced
Published in:
Photonics Technology Letters, IEEE
(Volume:18
,
Issue:
22
)
Date of Publication: Nov.15, 2006
- Page(s):
- 2329 - 2331
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 9173022
- Digital Object Identifier :
- 10.1109/LPT.2006.885301
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 October 2006
- Issue Date :
- Nov.15, 2006
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
