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Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference

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14 Author(s)

This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006