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Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

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11 Author(s)
M. Bargallo Gonzalez ; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Ph:32 16 281381 ; G. Eneman ; P. Verheyen ; C. Claeys
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Here, a systematic study is made of the leakage current in huge-area SiGe-Si p+-n junctions. As will be shown, both the perimeter and area leakage current density are a sensitive function of the S/D etch depth, whereby a higher leakage is obtained for deeper trenches. This can be explained by the presence of dislocations at the SiGe-Si interface, as revealed by transmission electron microscopy (TEM) and their relative distance to the electrical junction

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006