By Topic

Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)

Here, a systematic study is made of the leakage current in huge-area SiGe-Si p+-n junctions. As will be shown, both the perimeter and area leakage current density are a sensitive function of the S/D etch depth, whereby a higher leakage is obtained for deeper trenches. This can be explained by the presence of dislocations at the SiGe-Si interface, as revealed by transmission electron microscopy (TEM) and their relative distance to the electrical junction

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006