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CMOS Transconductors With Nearly Constant Input Ranges Over Wide Tuning Intervals

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3 Author(s)
P. Bruschi ; Dipt. di Ingegneria dell'Informazione, Pisa Univ. ; F. Sebastiano ; N. Nizza

Three different bias strategies aimed to reduce the effect of tuning on either the differential input range or the common-mode range of triode-region CMOS transconductors are presented. The method is applied to an original transconductor topology that is optimized to produce ultralow Gm values. A prototype circuit, which was designed with the 0.35-mum bipolar-CMOS-DMOS (BCD6) process of STMicroelectronics, is presented. The effectiveness and limitations of the method are characterized by means of electrical simulations

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IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:53 ,  Issue: 10 )