Referenced Items are not available for this document.
A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer
Published in:
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Date of Conference: 0-0 0
- Page(s):
- 19 - 20
- Print ISBN:
- 1-4244-0006-6
- INSPEC Accession Number:
- 9177044
- Conference Location :
- Honolulu, HI
- Digital Object Identifier :
- 10.1109/VLSIC.2006.1705291
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
