Gate Dielectric by Charge-Pumping Technique
Referenced Items are not available for this document.
Depth Profiling of Border Traps in MOSFET With High-
Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density (Dit). The charge pumped per cycle (Qcp) versus high level (Vh ) of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution on Qcp as a function of frequency was successfully used to determine the depth profile of border-trap density near the high-kappa gate dielectric/Si interface. The influence of border trap in high-kappa dielectric on the Dit measurement can be prevented by an appropriate selection of gate frequency in CP technique
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 859 - 862
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9116772
- Digital Object Identifier :
- 10.1109/LED.2006.882563
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
