Reliability by Incorporation of Fluorine
Referenced Items are not available for this document.
Improvement in High-
In this letter, we demonstrate that negative bias temperature instability of high-k (HfO2/SiO2) gate dielectric stacks can be greatly improved by incorporating fluorine and engineering its concentration depth profile with respect to HfO2/SiO2 interface. It was found that fluorine is easily incorporated in HfO2/SiO2 at low temperatures (les400degC) by F2 anneal in the presence of UV radiation. Fluorine tends to segregate at the HfO2/SiO2 interface and, to a lesser extent, diffuses into the underlying SiO2/Si interface. The HfO2 /SiO2 stacks with F addition show significantly reduced (<50%) positive charge trapping and interface states generation compared to control samples without F
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 821 - 823
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9116760
- Digital Object Identifier :
- 10.1109/LED.2006.882564
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
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