Referenced Items are not available for this document.
Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge2Sb2Te 5 (GST) nonvolatile memory cell. It is shown that the main source of heat for a SET to RESET transition is the GST bulk and interface regions instead of the contacting electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. Increasing bottom contact resistivity offers a scaling path for RESET current with no electrical penalties
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 808 - 810
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9116756
- Digital Object Identifier :
- 10.1109/LED.2006.882527
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
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