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A 15-Gb/s 2.4-V Optical Receiver Using a Ge-on-SOI Photodiode and a CMOS IC

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6 Author(s)
Schow, C.L. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY ; Schares, L. ; Koester, S.J. ; Dehlinger, G.
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We report the fastest (15 Gb/s) and lowest voltage (2.4V) all-silicon-based optical receiver to date. The receiver consists of a lateral, interdigitated, germanium-on-silicon-on-insulator (Ge-on-SOI) photodiode wire-bonded to a 0.13-mum complementary metal-oxide-semiconductor (CMOS) receiver integrated circuit (IC). The photodiode has an external quantum efficiency of 52% at lambda=850 nm and a dark current of 10 nA at -2 V. The small-signal transimpedance of the receiver is 91-dBOmega and the bandwidth is 6.6 GHz. At a bit-error rate of 10-12 and lambda=850 nm; the receiver exhibits sensitivities of -11.0, -9.6, and -7.4 dBm at 12.5, 14, and 15 Gb/s, respectively. The receiver operates error-free at rates up to 10 Gb/s with an IC supply voltage as low as 1.5 V and with a photodiode bias as low as 0.5 V. The power consumption is 3 to 7 mW/Gb/s. The Ge-on-SOI photodiode is well suited for integration with CMOS processing, raising the possibility of producing high-performance, low-voltage, monolithically integrated receivers based on this technology in the future

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 19 )

Date of Publication:

Oct.1, 2006

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