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A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

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2 Author(s)
Bo Shi ; Inst. for Infocomm Res., Singapore ; Yan Wah Chia

This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mum SiGe BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm2 chip area and consumes 11 mA from a 2.7 V supply

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Date of Conference:

11-13 June 2006

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