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A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications

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4 Author(s)
Yuan Lu ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Krithivasan, R. ; Wei-Min Lance Kuo ; Cressler, J.D.

We present the design and implementation of an ultra-wideband (UWB) silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) low-noise amplifier (LNA) for use in UWB systems. The use of a shunt base-emitter capacitor and weak shunt resistive feedback in a cascode amplifier with inductive degeneration significantly improves the input bandwidth of the LNA, and allows very low noise figure to be achieved simultaneously. The LNA was fabricated in a commercially-available 0.18 mum 120 GHz SiGe HBT BiCMOS process technology. The circuit occupies an area of 0.72 mm2, and exhibits a record noise figure (NF) of 1.8-3.1 dB across 3.0-10.0 GHz. This SiGe LNA is very broadband, covering the entire frequency range of 0.1 to 13.6 GHz, attains a maximum gain is 20.3 dB, and operates off a 3.3 V supply with a total power consumption of 26 mW

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Date of Conference:

11-13 June 2006