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High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization

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3 Author(s)
Su, C.-J. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Lin, H.C. ; Huang, T.Y.

Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )