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Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate

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10 Author(s)
Yong-Hae Kim ; Basic Res. Lab., Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Chung, Choong-Heui ; Moon, Jaehyun ; Gi Heon Kim
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A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (<120°C) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm2. The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm2/Vs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )

Date of Publication:

July 2006

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