Referenced Items are not available for this document.
A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (<120°C) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm2. The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm2/Vs.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
7
)
Date of Publication: July 2006
- Page(s):
- 579 - 581
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8990873
- Digital Object Identifier :
- 10.1109/LED.2006.877713
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 June 2006
- Issue Date :
- July 2006
- Sponsored by :
- IEEE Electron Devices Society
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