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Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz

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8 Author(s)
Ueda, K. ; NTT Basic Res. Labs., Atsugi, Japan ; Kasu, M. ; Yamauchi, Y. ; Makimoto, T.
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Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (/spl sim/100 μm), field effect transistors (FETs) with gate lengths of 0.1 μm were fabricated. From the RF characteristics, the maximum transition frequency fT and the maximum frequency of oscillation fmax were /spl sim/ 45 and /spl sim/ 120 GHz, respectively. The fT and fmax values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a drain-current density I/sub DS/ of 550 mA/mm at gate-source voltage V/sub GS/ of -3.5 V and a maximum transconductance g/sub m/ of 143 mS/mm at drain voltage V/sub DS/ of -8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )