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Effect of ohmic contacts on buffer leakage of GaN transistors

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7 Author(s)
Dora, Y. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Chakraborty, A. ; Heikman, S. ; McCarthy, L.
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The effect of ohmic contacts on the buffer leakage of GaN transistors is presented. The buffer leakage for AlGaN/GaN high-electron mobility transistors and GaN MESFETs grown on the same underlying buffer was observed to be different. Controlled experiments show that the increased buffer leakage is due to the nature of the alloyed ohmic contacts and can be minimized if they are screened by the Si doping or by the two-dimensional electron gas.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )