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A highly linear double balanced Schottky diode S-band mixer

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4 Author(s)
M. Sudow ; Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden ; K. Andersson ; P. -A. Nilsson ; N. Rorsman

A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm2. The mixer has a maximum IIP3 of 38dBm and IIP2 of 58dBm at 3.3GHz, and a typical P1 dB of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:16 ,  Issue: 6 )