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New thin-film power MOSFETs with a buried oxide double step structure

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3 Author(s)
Baoxing Duan ; Semicond. Center of Microelectron., Univ. of Electron. Sci. & Technol. of China, Sichuan, China ; Bo Zhang ; Zhaoji Li

A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )