Referenced Items are not available for this document.
A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
5
)
Date of Publication: May 2006
- Page(s):
- 377 - 379
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8898059
- Digital Object Identifier :
- 10.1109/LED.2006.872904
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 May 2006
- Issue Date :
- May 2006
- Sponsored by :
- IEEE Electron Devices Society
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