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High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect

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3 Author(s)
Y. P. Zhang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; L. H. Guo ; M. Sun

Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 /spl Omega//spl middot/cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of -46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 /spl Omega//spl middot/cm silicon wafer of 750-μm thickness.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 5 )