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This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency fr0 of 20.2 GHz with a peak current density of 218 kA/cm2, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3×10-7 Ω·cm2 extracted from RF measurements was achieved by Ni silicidation through a P δ-doped quantum well by rapid thermal sintering at 430°C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.