Referenced Items are not available for this document.
This letter reports a metal-insulator-semiconductor structure based on Al2O3/TiO2 nanolaminates and AlTiO films evaporated on an unheated p-Si substrate. The structure exhibits a low hysteresis in the capacitance-voltage characteristics, a larger dielectric constant leading to a quantum mechanically corrected effective oxide thickness of 1.35-2.1 nm, good stability of the electrical characteristics to thermal processes, a large breakdown electric field of 7.5 MV/cm, and a leakage current density below 5×10-7 A/cm2 at an electric field of 2 MV/cm.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
5
)
Date of Publication: May 2006
- Page(s):
- 344 - 346
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8898052
- Digital Object Identifier :
- 10.1109/LED.2006.873879
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 May 2006
- Issue Date :
- May 2006
- Sponsored by :
- IEEE Electron Devices Society
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