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Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

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7 Author(s)
Saito, W. ; Semicond. Co., Toshiba Corp., Kawasaki, Japan ; Domon, T. ; Omura, I. ; Kuraguchi, M.
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A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )

Date of Publication:

May 2006

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