Referenced Items are not available for this document.
Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron-mobility transistor (HEMT) structure have been realized, and the piezoresponse has been characterized. Cantilever bending experiments resulted in a Young's modulus of approximately 250 GPa, a sensitivity of K∼90, and a modulation of the HEMT current of up to 50%. It is seen that the piezoresponse could be related to both the bulk properties and the properties of the heterostructure interface.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
5
)
Date of Publication: May 2006
- Page(s):
- 309 - 312
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8898046
- Digital Object Identifier :
- 10.1109/LED.2006.872918
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 May 2006
- Issue Date :
- May 2006
- Sponsored by :
- IEEE Electron Devices Society
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