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A 100W high-efficiency GaN HEMT amplifier for S-Band wireless system

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4 Author(s)
A. Maekawa ; Eudyna Devices Inc., Japan ; M. Nagahara ; T. Yamamoto ; S. Sano

We have successfully developed a 100W AlGaN/GaN power amplifier with a bandwidth of 300MHz in S-band, operating at 50V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100W and a high linear gain of more than 13.5dB in the frequency range of 2.6GHz to 2.9GHz under CW or pulsed conditions [200usec (pulse width) and 2msec(period)]. High drain efficiency of 58% was also achieved at an output power of 100W and frequency of 2.8GHz. To the best of our knowledge this is the first report of 100W AlGaN/GaN HEMT amplifier developed for S-band high power application.

Published in:

2005 European Microwave Conference  (Volume:3 )

Date of Conference:

4-6 Oct. 2005