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Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT=∼1 nm

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7 Author(s)
Zhibo Zhang ; Texas Instrum. Inc., Dallas, TX, USA ; S. C. Song ; M. A. Quevedo-Lopez ; Kisik Choi
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HfO2 and HfSiON gate dielectrics with high-field electron mobility greater than 90% of the SiO2 universal mobility and equivalent oxide thickness (EOT) approaching 1 nm are successfully achieved by co-optimizing the metal gate/high-k/bottom interface stack. Besides the thickness of the high-κ dielectrics, the thickness of the ALD TiN metal gate and the formation of the bottom interface also play an important role in scaling EOT and achieving high electron mobility. A phase transformation is observed for aggressively scaled HfO2 and HfSiON, which may be responsible for the high mobility and low charge trapping of the optimized HfO2 gate stack.

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 3 )