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An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

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7 Author(s)
Wei Lee ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Pin Su ; Hou-Yu Chen ; Chang-Yun Chang
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This letter provides an assessment of single-electron effects in ultrashort multiple-gate silicon-on-insulator (SOI) MOSFETs with 1.6-nm gate oxide. Coulomb blockade oscillations have been observed at room temperature for gate bias as low as 0.2 V. The charging energy, which is about 17 meV for devices with 30-nm gate length, may be modulated by the gate geometry. The multiple-gate SOI MOSFET, with its main advantage in the suppression of short-channel effects for CMOS scaling, presents a very promising scheme to build room-temperature single-electron transistors with standard silicon nanoelectronics process.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 3 )