By Topic

Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Qiuxia Xu ; Inst. of Microelectron., Chinese Acad. of Sci., China ; Xiaofong Duan ; He Qian ; Haihua Liu
more authors

A simple, highly manufacturable process has been demonstrated to induce a uniaxial compressive stress in the channel to gain enhanced pMOSFETs performance without additional mask. By integrating Ge pre-amorphization implantation (PAI) for S/D extension of pMOS device, up to 32% hole effective mobility improvement has been obtained comparing control one at 0.6 MV/cm vertical field, and the hole mobility enhancement is nearly kept at higher vertical field. The scaling of feature size, such as gate length and channel width, strengthen the enhancement of the hole effective mobility greatly. The electron effective mobility has a negligible affection.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 3 )