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A memory device based on the sandwiched structure of a conjugated copolymer (PF8Eu), containing fluorene and chelated europium complex, has been fabricated. An electrical bistability phenomenon was observed on this device: low conductivity state for the as-fabricated device and high conductivity state after device transition by applying a voltage of ∼3 V. At the low conductivity state, the device showed a charge injection controlled current and at the high conductivity state, the device showed a space charge limited current. At the same applied voltage, the device exhibited two distinguishable conductivities with an ON/OFF current ratio as high as 106 at room temperature. After transition to the high conductivity state, the device tended to remain in the high conductivity state even when the applied voltage was removed. Thus, the device is a potential write-once-read-many-times memory device.