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Electrically bistable memory device based on spin-coated molecular complex thin film

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4 Author(s)
Zhengchun Liu ; Inst. for Micromanuf., Louisiana Tech Univ., Ruston, LA, USA ; Fengliang Xue ; Yi Su ; K. Varahramyan

We present an organic electrically bistable memory device based on the molecular complex film composed of tetracyanoquinodimethane and a soluble methanofullerene derivative [6,6]-phenyl C61-butyric acid methyl ester. The device has an Al/molecules/Al sandwich-like structure. The molecular layer was formed by spin-coating technique instead of expensive vacuum deposition method. The current-voltage characteristics show that the device switches from the initial "low" conduction state to "high" conduction state upon application of external electric field at room temperature. The on/off ratio is up to 106. Either state has been found to remain stable for more than five months, even after the external electric field is removed. The device presented is of potential use for low-cost write-once-read-many-times memory applications.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 3 )