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A SiGe monolithically integrated 75 GHz push-push VCO

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3 Author(s)
Wanner, R. ; Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany ; Lachner, R. ; Olbrich, G.R.

In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 ± 0.4 dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Date of Conference:

18-20 Jan. 2006