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A regulated charge pump with small ripple voltage and fast start-up

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6 Author(s)
Jae-Youl Lee ; Adv. DDI Design Team, Samsung Electron., Yongin, South Korea ; Sung-Eun Kim ; Seong-Jun Song ; Jin-Kyung Kim
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A regulated charge pump circuit is realized in a 3.3-V 0.13-μm CMOS technology. The charge pump exploits an automatic pumping control scheme to provide small ripple output voltage and fast start-up by decoupling output ripple and start-up time. The automatic pumping control scheme is composed of two schemes, an automatic pumping current control scheme and an automatic pumping frequency control scheme. The former automatically adjusts the size of pumping driver to reduce ripple voltage according to output voltage. The latter changes the pumping period by controlling a voltage-controlled oscillator (VCO). The output frequency of the VCO varies from 400 kHz to 600 kHz by controlling the input bias voltage of the VCO. The prototype chip delivers regulated 4.5-V output voltage from a supply voltage of 3.3 V with a flying capacitor of 330 nF, while providing 30 mA of load current. The area is 0.25 mm2 and the measured output ripple voltage is less than 33.8 mV with a 2-μF load capacitor. The power efficiency is greater than 70% at the range of load current from 1 to 30 mA. An analytical model for ripple voltage and recovery time is proposed demonstrating a reasonable agreement with SPICE simulation results.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:41 ,  Issue: 2 )