Referenced Items are not available for this document.
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same and the materials were grown in consecutive growth runs to minimize other differences
Published in:
Quantum Electronics Conference, 2005. EQEC '05. European
Date of Conference: 12-17 June 2005
- Page(s):
- 19
- Print ISBN:
- 0-7803-8973-5
- INSPEC Accession Number:
- 8955805
- Conference Location :
- Munich
- Digital Object Identifier :
- 10.1109/EQEC.2005.1567192
- Product Type:
- Conference Publications
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