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Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz fT and 184 GHz fmax

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3 Author(s)
M. Higashiwaki ; Nat. Inst. of Inf. & Commun. Technol., Tokyo ; T. Matsui ; T. Mimura

In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography

Published in:

63rd Device Research Conference Digest, 2005. DRC '05.  (Volume:2 )

Date of Conference:

22-22 June 2005