Referenced Items are not available for this document.
We demonstrate a high-performance AlInAs avalanche photodiode (APD) based on a novel planar diode concept. The APD features a simple planar structure without a guardring, which simplifies production making it more like a PIN photodiode process. Measured device characteristics designed for 10-Gb/s use were a dark current of 0.16 μA, responsivity of 0.88 A/W, and a gain-bandwidth product of 120 GHz. Reliability was guaranteed by an aging test exceeding 2400 h, whose conditions were a reverse dark current of 100 μA at 175°C. These features and performance indicate that the AlInAs APD is highly practical.
Published in:
Photonics Technology Letters, IEEE
(Volume:18
,
Issue:
1
)
Date of Publication: Jan. 1, 2006
- Page(s):
- 76 - 78
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8811805
- Digital Object Identifier :
- 10.1109/LPT.2005.860399
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 December 2005
- Issue Date :
- Jan. 1, 2006
- Sponsored by :
- IEEE Photonics Society
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