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Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

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6 Author(s)
Ray, S.K. ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK ; Groom, K.M. ; Beattie, M.D. ; Liu, H.Y.
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We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 μm quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 1 )