Referenced Items are not available for this document.
We propose and demonstrate a technique for tailoring the emission bandwidth of ∼1.3 μm quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.
Published in:
Photonics Technology Letters, IEEE
(Volume:18
,
Issue:
1
)
Date of Publication: Jan. 1, 2006
- Page(s):
- 58 - 60
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8811799
- Digital Object Identifier :
- 10.1109/LPT.2005.860028
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 December 2005
- Issue Date :
- Jan. 1, 2006
- Sponsored by :
- IEEE Photonics Society
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