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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:18 Issue:1 Help

A 1 cm×1 cm In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

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4 Author(s)
Clark, W.R. ; OptoGration Inc., Haverhill, MA, USA ; Davis, Andrew ; Roland, M. ; Vaccaro, Kenneth

We report a 1 cm×1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.

Published in:
Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 1 )

Date of Publication: Jan. 1, 2006

Page(s):
19 - 21
ISSN :
1041-1135
INSPEC Accession Number:
8811786
Digital Object Identifier :
10.1109/LPT.2005.860032
Date of Current Version :
19 December 2005
Issue Date :
Jan. 1, 2006
Sponsored by :
IEEE Photonics Society

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