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A 1 cm×1 cm In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

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4 Author(s)
W. R. Clark ; OptoGration Inc., Haverhill, MA, USA ; A. Davis ; M. Roland ; K. Vaccaro

We report a 1 cm×1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.

Published in:

IEEE Photonics Technology Letters  (Volume:18 ,  Issue: 1 )