By Topic

Total dose degradation of low-dropout voltage regulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
T. F. Miyahira ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; B. G. Rax ; A. H. Johnston

A low dropout voltage regulator that uses a lateral pnp transistor as a pass transistor in the output stage is evaluated for total dose degradation. Degradation occurs from two different mechanisms, one involving gradual degradation due to changes in internal reference voltage resulting in small changes in output voltage saturation characteristics; and the other causing the output voltage to fall to nearly zero because of gain degradation in the lateral pnp output transistor. Additionally, wide variability was observed between two different lots of devices, produced approximately 18 months apart. This illustrates the importance of lot-sample testing when these highly sensitive devices are considered for use in space.

Published in:

IEEE Radiation Effects Data Workshop, 2005.

Date of Conference:

11-15 July 2005