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The impact of substrate bias on proton damage in 130 nm CMOS technology

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8 Author(s)
Haugerud, B.M. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Venkataraman, S. ; Sutton, A.K. ; Prakash, A.P.G.
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The effects of proton irradiation on the dc and ac properties of 130 nm Si CMOS technology are investigated. The impact of substrate bias is reported for the first time. Two different irradiation substrate conditions were used, yielding different results. A comparison is drawn between the present work and a previously reported 180 nm CMOS technology node.

Published in:
Radiation Effects Data Workshop, 2005. IEEE

Date of Conference: 11-15 July 2005

Page(s):
117 - 121
Print ISBN:
0-7803-9367-8
INSPEC Accession Number:
8763210
Digital Object Identifier :
10.1109/REDW.2005.1532676
Product Type:
Conference Publications

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