By Topic

The impact of substrate bias on proton damage in 130 nm CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Haugerud, B.M. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Venkataraman, S. ; Sutton, A.K. ; Prakash, A.P.G.
more authors

The effects of proton irradiation on the dc and ac properties of 130 nm Si CMOS technology are investigated. The impact of substrate bias is reported for the first time. Two different irradiation substrate conditions were used, yielding different results. A comparison is drawn between the present work and a previously reported 180 nm CMOS technology node.

Published in:

Radiation Effects Data Workshop, 2005. IEEE

Date of Conference:

11-15 July 2005