Referenced Items are not available for this document.
Technology advances in wafer processing and design, new device requirements and improved modeling necessitate the need for a careful determination of LET at and through the critical silicon region of interest during SEE testing.
Published in:
Radiation Effects Data Workshop, 2005. IEEE
Date of Conference: 11-15 July 2005
- Page(s):
- 20 - 25
- Print ISBN:
- 0-7803-9367-8
- INSPEC Accession Number:
- 8748934
- Digital Object Identifier :
- 10.1109/REDW.2005.1532660
- Product Type:
- Conference Publications
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