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A 77GHz automotive radar MMIC chip set fabricated by a 0.15μm MHEMT technology

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6 Author(s)
Dong Min Kang ; Basic Res. Lab., ETRI, Daejeon, South Korea ; Ju Yeon Hong ; Jae Yeob Shim ; Jin Hee Lee
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A MMIC chip set consisting of a power amplifier, a driver amplifier, low noise amplifier, and a frequency doubler has been developed for automotive radar systems at 77GHz. The chip set was fabricated using 0.15 μm gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76-77GHz with 15.5 dBm output power. The chip size is 2mm × 2mm. The driver amplifier exhibited a gain of 23dB over a 76-77 GHz band with an output power of 13dBm. The chip size is 2.1mm × 2mm. The low noise amplifier achieved a gain of 20 dB in a band between 76-77GHz with an output power of 10 dBm. The chip size is 2.2mm × 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in W-band.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005