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Distributed effects in high power RF LDMOS transistors

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8 Author(s)
Goverdhanam, K. ; Agere Syst., Allentown, PA, USA ; Wenhua Dai ; Frei, Michel ; Farrell, D.
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This paper focuses on the effects of distributed RF transmission lines on performance aspects, such as, gain, output power, efficiency etc. in high power RF LDMOS amplifiers. The methodology to model and capture the distributed effects is discussed. Suitable alternatives to mitigate power loss due to distributive effects in large transistors are presented. Also, the contributions of the package to the overall device performance are addressed.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005

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