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In this paper, an InGaP/GaAs HBT broadband power amplifier with a novel tunable output matching circuit is first proposed and implemented. The 3-stage broadband power amplifier is realized by using the compensating matching technique and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel L_C tank circuits using PIN diodes to control the inductor value. This broadband amplifier module offers the advantage of fewer components, less power insertion loss, small size and high linearity. The broadband power amplifier module demonstrates 28 dB power gain, 30 dBm output power and higher than 30% power added efficiency (PAE) at frequencies covering dual bands from 0.85 GHz to 0.95 GHz and from 1.71 GHz to 1.95 GHz, which can be used in the GSM, DCS, PCS and CDMA systems.