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Wigner simulation of the transition of a 'single' to 'double' barrier DMS device

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1 Author(s)
Grubin, H.L. ; Dept. of Phys., Hartford Univ., West Hartford, CT, USA

The presence of dilute magnetic semiconductors (DMS) enriches the design potential of nano scale barrier devices. Placement of these DMS layers within or adjacent to a barrier can effectively lower or raise the barrier height for carriers of different spin and thereby introduce separate but coupled components of current. The magnetic field in high g-factor devices then can function as a pseudo third terminal. In anticipation of an n-type technology with these materials we examine the development of a barrier device that contains a DMS layer strategically placed so that in the presence of a magnetic field the barrier device is transformed into a double barrier device. The goal of this design is to create a device that will show tunneling resonances. Some early calculations with this structure will be presented showing the possibilities, pitfalls and potential for designing such a structure.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005