Referenced Items are not available for this document.
In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-μm quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.
Published in:
Photonics Technology Letters, IEEE
(Volume:17
,
Issue:
9
)
Date of Publication: Sept. 2005
- Page(s):
- 1785 - 1787
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8546268
- Digital Object Identifier :
- 10.1109/LPT.2005.853530
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 August 2005
- Issue Date :
- Sept. 2005
- Sponsored by :
- IEEE Photonics Society
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