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Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

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8 Author(s)
Ray, S.K. ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK ; Groom, K.M. ; Hogg, R.A. ; Liu, H.Y.
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We demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-μm quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 9 )