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Silicon nitride-on-silicon bar resonator using internal electrostatic transduction

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2 Author(s)
S. A. Bhave ; Berkeley Sensor & Actuator Center, California Univ., Berkeley, CA, USA ; R. T. Howe

This paper demonstrates an electrostatic transducer for lateral-mode bar resonators in which a high dielectric constant (high-K) thin film is sandwiched between polysilicon electrodes and the top surface of the resonator. This internal electrostatic transducer has several advantages over both air-gap electrostatic and piezoelectric transduction, including lower motional impedance (Rx), compatibility with advanced scaled CMOS device technology, and extended dynamic range. The resonators are fabricated on 4 μm thick heavily-doped SOI wafers with 200 nm thick silicon nitride film as the dielectric transducer. Using this configuration, we have demonstrated a 121 MHz silicon nitride-on-silicon lateral-mode bar resonator with a quality factor (Q) of 2,100 in air and motional impedance of 9 kΩ.

Published in:

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.  (Volume:2 )

Date of Conference:

5-9 June 2005