By Topic

Capacitive silicon pressure sensor based on the one-side wafer processing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lysko, J.M. ; Inst. of Electron Technol., Warsaw, Poland ; Stolarski, E. ; Jachowicz, R.S.

A novel design of a capacitive pressure sensor and a fabrication method based on one-side wafer processing are proposed. A matrix of 50 sensor cells connected in parallel serves as a single pressure sensor. This construction gives both an increase of the sensor capacitance level and a higher yield rate of the sensor fabrication. A detailed description of the single sensor cell construction and the technology of fabrication is presented. Some measurement results and their evaluations for pressure tests in the 20 atm range are also discussed.<>

Published in:

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Date of Conference:

24-27 June 1991