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Two-dimensional modeling of channel hot-electron effects in silicon MOSFETS

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2 Author(s)
C. L. Wilson ; National Bureau of Standards, Gaithersburg, MD ; T. J. Russell

Earlier models have successfully modeled currents associated with device degradation caused by channel hot electrons. In this work, a high accuracy two-dimensional model of a silicon MOSFET is combined with a model of the SiO2- Si interface which includes both the energy dependence of the interface traps within the silicon bandgap and the dependence of the oxide charge and the interface traps along the channel of the transistor. This model allows modeling of the effects of channel hot electrons on the subthreshold, linear, and saturation region after injection of the device to be modeled without introducing free parameters.

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Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference: