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A new "SICOS" Schottky device

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4 Author(s)
Okada, Y. ; Hitachi, Ltd., Kokubunji, Tokyo, Japan ; Nakamura, T. ; Okabe, Takahiro ; Nagata, M.

A new Schottky barrier diode (SBD) structure with a very small self-aligned guard ring has been proposed. This device is compatible with the SICOS (SIdewall base COntact Structure) process [1] [2]. The key technology is lateral impurity diffusion from doped poly-silicon, which makes guard ring size very small and improves the clamping effectiveness of SBDs. Very high speed Schottky TTL circuits using proposed devices are demonstrated which achieve a gate delay time of 330 ps/gate (fan in=3) with 2.3 mW/gate power dissipation, making them very attractive for use in high performance bipolar VLSIs.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

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