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A sub-100 picosecond bipolar ECL technology

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7 Author(s)
Vora, M. ; Fairchild Research Center, Palo Alto, CA ; Ho, Y.L. ; Bhamre, S. ; Chien, F.
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A fully Self-Aligned Polysilicon bipolar transistor with Trench structure (SAPT) has been developed for its application in high-performance ECL circuits. An ECL gate delay of 80 ps was obtained with a transistor designed with 2 micron lithography (1.5 um emitter). This new transistor structure with two levels of polysilicon and trench technique for isolation promises to become very attractive for giga-bit digital systems.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference:

1985

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