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Browse Conference Publications > Electron Devices Meeting, 198 ... Help

Hot carrier effects in advanced self-aligned bipolar transistors

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2 Author(s)
Petersen, S.A. ; University of Arizona, Tucson, Az. ; Li, G.P.

This work describes a hot electron induced current gain degradation study in advanced self-aligned sidewall spacer NPN bipolar transistors. The effects of the extrinsic base drive-in thermal cycle on current gain degradation and intrinsic base link-up are discussed.

Published in:
Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference: 1985

Page(s):
22 - 25
Digital Object Identifier :
10.1109/IEDM.1985.190881
Product Type:
Conference Publications

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