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A manufacturable 1.2 um double poly, double level metal CMOS process for a one-megabit DRAM

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5 Author(s)
Harrington, T. ; Mostek Corporation, Carrollton, Texas ; Bayless, M. ; Waller, B. ; Chan, T.C.
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In recent years, many highly sophisticated technologies have been advanced for producing VLSI circuits. These include such schemes as deep trench isolation and trench capacitors

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Electron Devices Meeting, 1984 International  (Volume:30 )

Date of Conference: